leshan radio company, ltd. lmb t a55 w t1g lmb t a56 w t1g driver transistors pnp silicon maximum r a tings rating symbol lmb t a5 5 lmb t a5 6 unit collector?emitter v oltage v ceo ?60 ?8 0 vdc collector?base voltage v cbo ?60 ?80 vdc emitter?base voltage v ebo ?4.0 vdc collector current ? continuous i c ?500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 150 mw t a = 25c derate above 25c 1.2 mw/c thermal resistance, junction to ambient r ja 833 c/w total device dissipation p d 200 mw alumina substrate, (2) t a = 25c derate above 25c 1.6 mw/c thermal resistance, junction to ambient r ja 625 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmb t a55 w t1g = 2h; lmb t a56 w t1g = 2gm electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0 ) lmb t a55 ?60 ? lmb t a56 ?80 ? emitter?base breakdown voltage v (br)ebo ?4.0 ? vdc (i e = ?100 adc, i c = 0 ) collector cutoff current i ces ? ?0.1 adc ( v ce = ?60vdc, i b = 0) collector cutoff current i cbo adc ( v cb = ?60vdc, i e = 0) lmb t a55 ? ?0.1 ( v cb = ?80vdc, i e = 0) lmb t a56 ? ?0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2 emitter 3 collector 1 base value we declare that the material of product compliance with rohs requirements. s c-70 1 3 2 rev.o 1/3
leshan radio company, ltd. lmb t a55 w t1g lmb t a56 w t1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ? (i c = ?10 madc, v ce = ?1.0 vdc) 100 ? (i c = ?100madc, v ce = ?1.0 vdc) 100 ? collector?emitter saturation voltage v ce(sat) ? ?0.25 vdc (i c = ?100madc, i b = ?10madc) base?emitter on voltage v be(on) ? ?1.2 vdc (i c = ?100madc, v ce = ?1.0vdc) small?signal characteristics current ?gain?bandwidth product(4) f t 50 ? mhz (v ce = ?1.0 vdc, i c = ?100madc, f = 100 mhz) 4. f t is defined as the frequency at which |h f e | extrapolates to unity. LMBTA55WT1G 2h 3000/ t ape & reel device marking shipping lmbta56wt1g 2gm 3000/ t ape & reel lmbta55wt3g 2h lmbta56wt3g 2gm 10000/ t ape & reel ordering information 10000/ t ape & reel figure 1. switching time test circuits output turn?on time ?1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn?off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities rev.o 2/3
leshan radio company, ltd. lmb t a55 w t1g lmb t a56 w t1g sc - 70 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev.o 3/3
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